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Proton-induced current transient in SiGe HBT and charge collection model based on Monte Carlo simulation |
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| Authors: | JiaNan Wei Yang Li WeiTao Yang ChaoHui He YongHong Li Hang Zang Pei Li JinXin Zhang Gang Guo |
| Abstract: | The study presents an investigation into the proton-induced current transient in a silicon-germanium heterojunction bipolar transistor (SiGe HBT). The temp |
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