Damage and strain in pseudomorphic vs relaxed GexSi1?x layers on Si(100) generated by Si ion irradiation |
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| Authors: | D Y C Lie A Vantomme F Eisen T Vreeland M -A Nicolet T K Carns K L Wang B Holländer |
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| Affiliation: | (1) California Institute of Technology, 91125 Pasadena, CA;(2) Department of Electrical Engineering, University of California, 90024 Los Angeles, CA;(3) Institiute of Thin Film and Ion Technology, Jülich, Germany;(4) National Fund for Scientific Research, Belgium |
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| Abstract: | We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed
GexSi1−x films grown on Si(100) substrates. The ion range is such that the Si/GexSi1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed GexSi1−x layers of similar x for irradiation doses up to 2.5 × 1014 Si/cm2 is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However,
the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed.
On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium. |
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| Keywords: | GeSi irradiation damage Si ion irradiation |
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