Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching |
| |
Authors: | Lai Chih-Chung Lee Yun-Ju Yeh Ping-Hung Lee Sheng-Wei |
| |
Affiliation: | Institute of Materials Science and Engineering, National Central University, Jhongli, 32001, Taiwan. phyeh331@mail.tku.edu.tw. |
| |
Abstract: | ABSTRACT: The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involving a locally temperature-sensitive redox reaction to explain this strong temperature dependence of the morphologies of SiGe NRs. At a lower etching temperature, both corrosion reaction and Au-assisted etching process were kinetically impeded, whereas at a higher temperature, Au-assisted anisotropic etching dominated the formation of SiGe NRs. With transmission electron microscopy and scanning electron microscopy analyses, this study provides a beneficial scheme to design and fabricate low-dimensional SiGe-based nanostructures for possible applications. |
| |
Keywords: | Ge nanorod self-assembly nanosphere lithography |
本文献已被 PubMed 等数据库收录! |
|