| 一种具有低泄漏电流和高浪涌电流能力的1 200 V/20 A SiC MPS |
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| 引用本文： | 易波,徐艺,马克强,王思亮,蒋兴莉,胡强,程骏骥,杨洪强. 一种具有低泄漏电流和高浪涌电流能力的1 200 V/20 A SiC MPS[J]. 微电子学, 2024, 54(1): 141-144 |
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| 作者姓名： | 易波 徐艺 马克强 王思亮 蒋兴莉 胡强 程骏骥 杨洪强 |
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| 作者单位： | 电子科技大学 集成电路科学与工程学院, 成都 611731;成都森未科技有限公司, 成都 611731 |
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| 基金项目： | 中国博士后科学基金资助项目(2020M683661XB) |
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| 摘 要： | 通过离子注入优化，成功研制了一款六角形元胞设计的1 200 V/20 A的具有低泄漏电流和高浪涌电流能力的SiC MPS芯片。在25℃和175℃下的测试结果表明，导通压降VF分别为1.48 V和2.03 V;归功于优化的离子注入和元胞设计，1 200 V耐压时，肖特基界面的最强电场强度仅为1.25 MV/cm。研制的MPS的泄漏电流仅为4.3μA(@25℃)和13.7μA(@175℃)。并且25℃和150℃下测试的浪涌电流高达258 A和252 A,约为额定电流的13倍。
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| 关 键 词： | SiC MPS 泄漏电流 高温漏电 浪涌电流能力 |
| 收稿时间： | 2023-06-25 |
A 1 200 V/20 A SiC MPS with Low Leakage Current and High Surge Current Capability |
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| YI Bo,XU Yi,MA Keqiang,WANG Siliang,JIANG Xingli,HU Qiang,CHENG Junji,YANG Hongqiang. A 1 200 V/20 A SiC MPS with Low Leakage Current and High Surge Current Capability[J]. Microelectronics, 2024, 54(1): 141-144 |
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| Authors: | YI Bo XU Yi MA Keqiang WANG Siliang JIANG Xingli HU Qiang CHENG Junji YANG Hongqiang |
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| Affiliation: | School of Integr.Circ.Sci.and Engineer., Univ.of Elec.Sci.and Technol.of China, Chengdu 611731, P.R.China;Chengdu Semi-Future Technology Co., Ltd., Chengdu 611731, P.R.China |
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| Abstract: | A 1 200 V/20 A SiC MPS with hexagonal cell realizing low leakage current and high surge current was fabricated through implantation optimization. Under 25 ℃ and 175 ℃ test condition, the results show that its on-state voltage drop (VF) is 1.48 V and 2.03 V, respectively. Owing to optimized implantation and layout design, the maximum electric field at the Schottky contact is only 1.25 MV/cm at 1 200 V. Correspondingly, the leakage current of the device @1 200 V is only 4.3 μA (@25 ℃) and 13.7 μA (@175 ℃), respectively. Moreover, its surge current capability at 25 ℃ and 150 ℃ reaches 258 A and 252 A, which is about 13 times of the rated current. |
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| Keywords: | SiC MPS leakage current high temperature leakage current surge current capability |
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