| Nd:YAG连续激光诱导下InP的Zn掺杂 |
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| 引用本文： | 蔡志华,田洪涛,陈朝,周海光,孙书农. Nd:YAG连续激光诱导下InP的Zn掺杂[J]. 量子电子学报, 2002, 19(5): 467-470 |
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| 作者姓名： | 蔡志华 田洪涛 陈朝 周海光 孙书农 |
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| 作者单位： | 1. 厦门大学物理系,厦门,361005
2. Department of Physics, Moscow University Russia 119899 |
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| 基金项目： | 本工作获得国家自然科学基金高科技探索项目（基金批号69887002），教育部与莫斯科大学合作项目的资助 |
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| 摘 要： | Nd:YAG连续激光辐照在表面蒸有Zn薄膜的n-InP片上,用激光诱导的方法实现Zn在InP中掺杂。形成PN结。用电化学C-V方法和扫描电子显微镜对辐照后的样品进行分析研究,给出激光辐照功率、辐照时间等工艺参数对结深、浓度分布影响.在n-InP片表面得到受主浓度分布均匀、高掺杂（～1019cm-3）、浅结（～1μm）的P-InP。初步分析其掺杂机理是激光诱导下所形成的合金结过程。
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| 关 键 词： | InP 激光诱导 Zn掺杂 |
| 文章编号： | 1007-5461(2002)05-0467-04 |
| 收稿时间： | 2001-09-26 |
| 修稿时间： | 2001-09-26 |
Doping of Zn into InP Induced by YAG Continuous Wave Laser |
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| Pavel K.Kashkarov. Doping of Zn into InP Induced by YAG Continuous Wave Laser[J]. Chinese Journal of Quantum Electronics, 2002, 19(5): 467-470 |
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| Authors: | Pavel K.Kashkarov |
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| Abstract: | Nd:YAG continuous laser was used to irradiate the n-InP substrates which wore vapoured Zn film on the samples surface. The doping of Zn into InP was achieved by the method of Nd: YAG continuous laser inducing doping, and the PN junctions were obtained. The samples, which were irradiated, were studied with an Electrochemical C-V profiler and Scanning Electron Microscope (SEM). The relation of performance parameters of PN junctions such as the depth of the junctions, the distribution of the doping concentration and the irradiation time, the irradiation power are presented . The experimental results show that the acceptor concentration of uniform distribution, shallow junction (-1 μm), and heavy doping concentration is attained (-1019cm-3). The primary mechanism of Zn doping is assumed that alloy junctions came to being with the laser irradiating. |
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| Keywords: | InP laser inducing doping of Zn |
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