| 微波电路用共面电极TaNx薄膜片式电阻器 |
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| 引用本文： | 程超,赵海飞,冯毅龙,杨俊锋. 微波电路用共面电极TaNx薄膜片式电阻器[J]. 电子元件与材料, 2009, 28(8). DOI: 10.3969/j.issn.1001-2028.2009.08.016 |
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| 作者姓名： | 程超 赵海飞 冯毅龙 杨俊锋 |
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| 作者单位： | 广州翔宇微电子有限公司,广东,广州,510288 |
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| 基金项目： | 广东省教育部产学研结合项目(薄膜化微波元器件集成技术研究和中试生产) |
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| 摘 要： | 采用反应溅射方法制作TaNx电阻薄膜,并通过溅射Ni、Au形成双层共面电极。研究了溅射条件对电阻薄膜组分的影响以及此类电阻器的微波特性。结果显示,溅射工作真空度小于0.5Pa,氮气体积分数大于5%时,可以得到阻值稳定的六方晶体结构TaNx电阻薄膜,其共面电极的电阻器使用频率上限大于20GHz。
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| 关 键 词： | TaNx 共面电极 薄膜片式电阻器 |
Tantalum nitride thin film chip resistor with top surface termination for microwave circuit |
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| CHENG Chao,ZHAO Haifei,FENG Yilong,YANG Junfeng. Tantalum nitride thin film chip resistor with top surface termination for microwave circuit[J]. Electronic Components & Materials, 2009, 28(8). DOI: 10.3969/j.issn.1001-2028.2009.08.016 |
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| Authors: | CHENG Chao ZHAO Haifei FENG Yilong YANG Junfeng |
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| Affiliation: | Guangzhou Summit Microelectronic Co.;Ltd;Guangzhou 510288 |
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| Abstract: | The tantalum nitride resistive thin film was deposited by reactive sputtering and the Ni, Au terminations were formed by sputtering. The influence of sputtering conditions on resistive film composition and analysis of the microwave performance of the resistors were investigated. The results show that the tantalum nitride thin film with hexagonal lattice structure can be obtained on the conditions of working pressure less than 0.5 Pa and nitrogen volume fraction more than 5% and the resistors with top surfac... |
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| Keywords: | tantalum nitride top surface termination thin film chip resistor |
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