| 自偏置低噪放的设计与改进 |
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| 引用本文： | 梁俊杰,薛红喜. 自偏置低噪放的设计与改进[J]. 电子技术应用, 2011, 37(2): 113-115 |
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| 作者姓名： | 梁俊杰 薛红喜 |
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| 作者单位： | 电子科技大学电子工程学院,四川,成都,611731 |
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| 摘 要： | 分析了贴片电容的非理想特性在C波段及以上频率的自偏置电路旁路应用中对低噪放设计的不利影响.分析表明,贴片电容用做自偏置旁路时将严重恶化电路的稳定性和噪声指标.提出了对自偏置电路的改进方法及工艺实现,从而避免了电容对指标的负面影响.为了验证改进电路的优势,采用改进的自偏置电路设计了6 GHz～9 GHz低噪放,实验结果很...
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| 关 键 词： | 低噪放 自偏置 隔直电容 旁路电容 C波段 |
The design and improvement of self-bias LNA |
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| Liang Junjie,Xue Hongxi. The design and improvement of self-bias LNA[J]. Application of Electronic Technique, 2011, 37(2): 113-115 |
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| Authors: | Liang Junjie Xue Hongxi |
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| Affiliation: | Liang Junjie,Xue Hongxi(School of Electronic Engineering,UESTC,Chengdu 611731,China) |
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| Abstract: | This paper analyzes the non-ideal characteristics of surface mount capacitors which have disadvantages to LNA design as a bypass of self-bias at the C-band or above.The analysis shows that: stability and noise figure specifications will be damaged when it is used for bypass in self-bias.This paper improves the self-bias circuit and avoids the impact of non-ideal capacitor.Improved self-bias LNA have been implemented,and the test results validate the analysis. |
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| Keywords: | LNA self-bias coupling capacitor bypass capacitor C-band |
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