Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures |
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Authors: | B. Witzigmann V. Laino M. Luisier U.T. Schwarz H. Fischer G. Feicht W. Wegscheider C. Rumbolz A. Lell V. Harle |
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Affiliation: | Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland; |
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Abstract: | The temperature dependent spectral gain in InGaN-GaN multiple quantum-well structures with 10% In content is investigated. Mode gain is measured in a temperature range between 239 K and 312 K using the Hakki-Paoli technique and compared to simulations. The simulation accounts for temperature-dependent polarization dephasing, and hence homogeneous broadening, in a rigorous fashion, without any fit parameter. It is found that the evolution of the gain spectrum with temperature at different drive currents can be modeled using a temperature-independent single value for inhomogeneous broadening. The resulting compositional fluctuations are compared to structural measurements. |
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