Synthesis and post-annealing effects on the transport properties of thermoelectric oxide (ZnO)mIn2O3 ceramics

The synthesis and transport properties of n-type thermoelectric oxide (ZnO)_mIn₂O₃ (Z_mIO) ceramics prepared by conventional solid-state reaction method have been reported. It is found that the transport properties of Z_mIO ceramics are very sensitive to the post-annealing temperature as well as the zinc content m. The resistivity of Z₅IO annealed at 1400 °C decreases by more than 2 orders of magnitude in comparison with that of Z₅IO annealed at 1200 °C, while the resistivities of Z₆IO compounds annealed at 1250 and 1350 °C are more than 3 orders of magnitude larger than that of Z₆IO annealed at 1300 °C. All the Z_mIO compounds annealed at 1300 °C show electron-type conduction with a lowest resistivity at m = 6. It is suggested that the oxygen defects or vacancies in the InO₂ layers play a major role on the carrier scattering mechanism, and the observed temperature-dependent resistivity for Z₅IO and Z₆IO compounds can be satisfactorily described by the variable-range hopping conduction. Furthermore, it is found that the values of Seebeck coefficient for Z_mIO are also very sensitive to the zinc content m. The dimensionless figure of merit of 0.0045 at 300 K for m = 6 has been obtained.