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Effects of annealing temperature on the photocatalytic activity of N-doped TiO2 thin films
Authors:Moo-Chin WangHuey-Jiuan Lin  Chien-Ho WangHsuan-Chung Wu
Affiliation:a Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan Road, Kaohsiung 80708, Taiwan
b Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan
c Department of Material Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan, Taipei 24301, Taiwan
Abstract:The effects of annealing temperature on the photocatalytic activity of nitrogen-doped (N-doped) titanium oxide (TiO2) thin films deposited on soda-lime-silica slide glass by radio frequency (RF) magnetron sputtering have been studied. Glancing incident X-ray diffraction (GIAXRD), Raman spectrum, scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectra were utilized to characterize the N-doped TiO2 thin films with and without annealing treatment. GIAXRD and Raman results show as-deposited N-doped TiO2 thin films to be nearly amorphous and that the rutile and anatase phases coexisted when the N-doped TiO2 thin films were annealed at 623 and 823 K for 1 h, respectively. SEM microstructure shows uniformly close packed and nearly round particles with a size of about 10 nm which are on the slide glass surface for TiO2 thin films annealed at 623 K for 1 h. AFM image shows the lowest surface roughness for the N-doped TiO2 thin films annealed at 623 K for 1 h. The N-doped TiO2 thin films annealed at 623 K for 1 h exhibit the best photocatalytic activity, with a rate constant (ka) of about 0.0034 h−1.
Keywords:N-TiO2 film   RF sputtering   Annealing   Photocatalysis
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