Oxidation protective MoSi2-SiC-Si coating for graphite materials prepared by slurry dipping and vapor silicon infiltration

A novel kind of dense MoSi₂-SiC-Si coating was prepared on the surface of graphite substrate by slurry dipping and vapor silicon infiltration process. Mo-SiC-C precoating was fabricated via slurry dipping method, and then MoSi₂-SiC-Si coating with dense structure consisting of Si, MoSi₂ and SiC was obtained by vapor silicon infiltration process. The isothermal oxidation tests at temperatures from 800 to 1600 °C and TGA test from room temperature to 1500 °C were used to evaluate the oxidation resistance ability of the MoSi₂-SiC-Si coating. The experimental results indicate that the prepared coating has good oxidation protection ability at a wide temperature range from room temperature to 1600 °C. Meanwhile, the oxidation of the coated samples is a weight gain process at temperatures from 800 to 1500 °C due to the formed SiO₂ layer on the surface of coating. After oxidation for 220 h at 1600 °C, the weight loss of the coated sample was only 0.96%, which is considered to be the excessive consumption of the outer coating and the appearance of defects in the coating. Two layers can be observed in the coating after oxidation, namely, SiO₂ layer and MoSi₂-SiC-Si layer.