First-principles investigation of new structure,mechanical and electronic properties of Mo-based silicides |
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Authors: | Yong Pan Shuanglun Wang Xi Zhang Linhu Jia |
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Affiliation: | School of Material Science and Engineering, Southwest Petroleum University, Chengdu 610500, China |
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Abstract: | The adjustment of strength and ductility of high-temperature ceramics is still a big challenge. Although Mo-based silicides are promising high-temperature materials, the influence of Mo concentration on the mechanical and electronic properties of Mo-based silicides is unclear. In addition, it is necessary to explore the novel Mo-based silicides. In this paper, we present results of novel phases, mechanical and electronic properties of the stable Mo-based silicides within various stoichiometries. Two new Mo-based silicides: MoSi (Cmcm and Pnma) and Mo2Si (I4/mcm) are predicted. The calculated results show that the volume deformation resistance of Mo-based silicides increases with increasing Mo concentration. MoSi2 shows the strongest elastic stiffness and shear deformation resistance due to the strong Mo-Si bonds. The calculated intrinsic hardness of MoSi2 (37.7 GPa) is much larger than that of other Mo-based silicides. In particular, MoSi2 and MoSi show brittle behavior. However, other silicides exhibit ductility. We further find that high concentration of Mo can improve the electronic properties of Mo-based silicides because of the formation of Mo-Mo metallic bond. Finally, our works indicate that the adjustment of the Mo stoichiometric ratio to improve the mechanical and electronic properties of Mo-based silicides. |
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Keywords: | Mo-based silicides Structural prediction Mechanical properties Electronic properties First-principles calculations |
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