Low-temperature sintering of Ti1?xCux/3Nb2x/3O2 (x = 0.23) microwave dielectric ceramics with CuO and B2O3 addition |
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| Authors: | Hui Shao Zhifu Liu Gang Jian Yongxiang Li |
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| Affiliation: | 1. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhengjiang 212003, China;2. CAS Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | The influence of CuO and B2O3 addition on the sintering behavior, microstructure and microwave dielectric properties of Ti1?xCux/3Nb2x/3O2 (TCN, x = 0.23) ceramic have been investigated. It was found that the addition of CuO and B2O3 successfully reduced the sintering temperature of TCN ceramics from 950 to 875 °C. X-ray diffraction studies showed that addition of CuO-B2O3 has no effect on the phase composition. The TCN ceramics with 0.5 wt% CuO-B2O3 addition showed a high dielectric constant of 95.63, τf value of + 329 ppm/°C and a good Q × f value of 8700 GHz after sintered at 875 °C for 5 h, cofirable with silver electrode. |
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| Keywords: | Dielectric properties Densification Corresponding authors |
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