Thickness dependent growth and ferroelectric/dielectric properties of phase-pure 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thin film derived from a modified sol-gel process |
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| Authors: | Huiting Sui Huajun Sun Xiaofang Liu Dingguo Zhou |
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| Affiliation: | 1. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People''s Republic of China;2. Advanced Ceramics Institute of Zibo New & High-Tech Industrial Development Zone, Zibo 255000, People''s Republic of China;3. School of Chemistry, Chemical Engineering and Life Sciences, Wuhan University of Technology, Wuhan 430070, People''s Republic of China |
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| Abstract: | Annealing parameter and thickness are two significant factors affecting microstructure and electrical performance of sol-gel derived 0.65Pb(Mg1/3Nb2/3)O3?0.35PbTiO3 (0.65PMN-0.35PT) thin film. In this paper, various durations are firstly selected for the investigations on annealing parameter of 0.65PMN-0.35PT thin film. Enhanced insulating and ferroelectric properties can be obtained for the film annealed for 1 min due to its phase-pure and homogeneous perovskite structure. Based on this, a series of 0.65PMN-0.35PT thin films with various thicknesses by modifying deposition layer are synthesized annealed for 1 min and the effects of thickness on crystalline, insulating, ferroelectric and dielectric properties are characterized. It reveals that thickness-dependent behavior can be noticed for 0.65PMN-0.35PT thin film with the results that the 8-layered film possesses a relative large remanent polarization (Pr) of 23.34 μC/cm2, and reduced leakage current density of 10?9 A/cm2 with low dissipation factor (tanδ) of 0.03 can be achieved for the 14-layered film. |
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| Keywords: | A Thin films B Sol-gel processes C Electronic properties |
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