Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Characterization of Cu(In_xGa_1−x)₂Se_3.5 thin films prepared by rf sputtering

Authors:	Tooru Tanaka Nobutaka Tanahashi Toshiyuki Yamaguchi and Akira Yoshida

Affiliation:	^a Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441, Japan ^b Department of Electrical Engineering, Wakayama College of Technology, 77 Noshima, Nada-cho, Gobo 644, Japan

Abstract:	Cu(In_xGa_1−x)₂Se_3.5 thin films were fabricated by rf sputtering from CuIn_xGa_1−xSe₂ and Na mixture target by controlling the mixture ratio. X-ray diffraction analyses show that the structure of Cu(In_xGa_1−x)₂Se_3.5, thin films is different from chalcopyrite structure: especially, CuIn₂Se_3.5 thin films have a defect chalcopyrite structure. The lattice parameters for Cu(In_xGa_1−x)₂Se_3.5 thin film are slightly smaller than those for CuIn_xGa_1−xSe₂ thin film and linearly decreased with increasing Ga content. The optical absorption coefficients for Cu(In_xGa_1−x)₂Se_3.5, thin films exceed 2 × 10⁴ cm⁻¹ in energy region above the fundamental band edge. The band gap for Cu(In_xGa_1−x)₂Se_3.5 thin films is larger than that for CuIn.Ga_1−x₂Se₂ with the same Ga content and increased with increasing Ga content.

Keywords:	Cu(In_xGa_1−x)₂Se₃ 5 Thin films rf sputtering
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