| 一种氧离子注入的均匀性控制系统设计 |
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| 引用本文： | 郭忠君,贾京英,刘咸成.一种氧离子注入的均匀性控制系统设计[J].自动化与仪器仪表,2012(4):74-76. |
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| 作者姓名： | 郭忠君 贾京英 刘咸成 |
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| 作者单位： | 中国电子科技集团公司第四十八研究所 长沙,410111 |
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| 摘 要： | 在SIMOX工艺制作过程中,氧离子注入的均匀性对SOI材料表面硅厚度的均匀性和SiO2埋层厚度的均匀性起着直接的决定性的作用。文章介绍了一种氧离子注入均匀性控制系统的工作原理和设计方案,该方案应用于我所研制的强流氧离子注入机,取得了理想的效果。
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| 关 键 词： | 离子注入 均匀性控制 SOI SIMOX |
Design of the uniforimity control system of the oxygen ion implanter |
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| Guo zhong-jun,Jia jing-ying,Liu xian-cheng.Design of the uniforimity control system of the oxygen ion implanter[J].Automation & Instrumentation,2012(4):74-76. |
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| Authors: | Guo zhong-jun Jia jing-ying Liu xian-cheng |
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| Affiliation: | Guo zhong-jun,Jia jing-ying,Liu xian-cheng |
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| Abstract: | During the process of the Separation by the Implantation of Oxygen（SIMOX）, the uniforirnity of the oxygen ion implanter is very important to ensure the uniform thickness of silicon film overlayer and the buried layer of silicon dioxide. We will introduce the fundamentals and scheme of the uniforimity control system of the Oxygen Ion Implanter, and the technique have a good effect on the 48^th research institute＇s new SIMOX implantation. |
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| Keywords: | Ion Implantation Uniformity Control Silicon-On-Insulator（SOI） Separation by the Implantation of Oxygen （SIMOX） |
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