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Combined reaction and diffusion controlled kinetics of silicidation |
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| Authors: | V E Borisenko L I Ivanenko and E A Krushevski |
| Affiliation: | a Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220027, Minsk, Belarus b Belarusian State Polytechnics Academy, F. Scorina 65, 220027, Minsk, Belarus |
| Abstract: | A model of combined reaction and diffusion controlled silicidation in thin film structures is presented. The analytical equation for silicide layer thickness as a function of the thermal processing regime has been obtained. Illustrative calculations for thin film chromium silicides formed by rapid thermal processing were performed within the proposed model and the traditional diffusion limited kinetics. Comparison of the results with the experimental data shows the proposed reaction-diffusion model to be much accurate, particularly at the early stage of the growth. |
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