Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition |
| |
| Authors: | P Taechakumput S Taylor O Buiu RJ Potter PR Chalker AC Jones |
| |
| Affiliation: | aDepartment of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK;bDepartment of Material Science and Engineering, University of Liverpool, Liverpool L69 3BX, UK;cDepartment of Chemistry, University of Liverpool, Liverpool L69 3ZD, UK |
| |
| Abstract: | Optical and electrical properties of a set of high-k dielectric HfO2 films, deposited by liquid injection atomic layer deposition (LI-ALD) and post deposition annealed (PDA) in nitrogen (N2) ambient at various temperatures (400–600 °C), were investigated. The films were prepared using the cyclopentadienyl of hafnium precursor Cp2Hf(CH3)2] with water deposited at 340 °C. The spectroscopic ellipsometric (SE) results show that the characteristics of the dielectric functions of these films are strongly affected by annealing temperatures. I–V results show that N2-based PDA enhances the average energy depth of the shallow trapping defects from Poole–Frenkel conduction fitting. This also correlated with the measured increase in MOS capacitance–voltage hysteresis. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
