Determination of optimal reactive sputtering conditions for the preparation of conductive transparent indium oxide films

The critical conditions for indium reactive sputtering under almost full oxidation are considered and the main details of this process are determined. The power coefficient of the sputtering velocity of the indium cathode and the power coefficient of the re-emission velocity of the oxygen from the growing indium oxide film surface have been determined experimentally. The influence of the sputtering conditions on stoichiometry, resistivity and optical transmission is investigated. It is shown that the critical conditions for reactive sputtering are close to the optimal conditions for obtaining highly conductive transparent indium oxide films. The method for calculating the values of the critical conditions for indium reactive sputtering is given.