| 隧道再生双有源区AlGaInP发光二极管提取效率的计算 |
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| 引用本文： | 田咏桃,仉志华,郭伟玲,沈光地.隧道再生双有源区AlGaInP发光二极管提取效率的计算[J].固体电子学研究与进展,2006,26(1):80-84. |
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| 作者姓名： | 田咏桃 仉志华 郭伟玲 沈光地 |
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| 作者单位： | 中国石油大学(华东),物理科学与技术学院,山东,东营,257061;北京工业大学,北京市光电子技术实验室,北京,100022;中国石油大学(华东),物理科学与技术学院,山东,东营,257061;北京工业大学,北京市光电子技术实验室,北京,100022 |
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| 基金项目： | 科技部科研项目
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国家自然科学基金
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北京市教委科研项目 |
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| 摘 要： | 建立了发光二极管提取效率的理论计算模型,分析了影响隧道再生双有源区AlGaInP发光二极管提取效率的主要因素,包括从出光表面出射的光、体内的光吸收损耗、衬底对光的吸收损耗、金属电极对光的吸收损耗,模拟计算了隧道再生双有源区AlGaInP发光二极管的提取效率,计算得到隧道再生双有源区AlGaInP LED管芯的上有源区和下有源区提取效率分别为5．24％和9．16％。
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| 关 键 词： | 铝镓铟磷 发光二极管 隧道结 提取效率 |
| 文章编号： | 1000-3819(2006)01-080-05 |
| 收稿时间： | 2004-03-29 |
| 修稿时间： | 2004-09-03 |
Calculation of the Extraction Efficiency in Tunneling-regenerated Double-active-region AlGaInP Light-emitting Diodes |
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| TIAN Yongtao,ZHANG Zhihua,GUO Weiling,SHEN Guangdi.Calculation of the Extraction Efficiency in Tunneling-regenerated Double-active-region AlGaInP Light-emitting Diodes[J].Research & Progress of Solid State Electronics,2006,26(1):80-84. |
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| Authors: | TIAN Yongtao ZHANG Zhihua GUO Weiling SHEN Guangdi |
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| Affiliation: | 1.College of Physics Science and Technology, University of Petroleum (East China;East China |
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| Abstract: | A method for calculating the extraction efficiency of light-emitting diodes is offered. The determinants of the extraction efficiency of tunneling-regenerated double-active-region (TRDAR) AlGalnP light-emitting diodes are investigated, including light escaping through the top surface, light loss due to absorption of diode bulk, light loss due to absorption of substrate and anode. The extraction efficiency of tunneling-regenerated double-active-region AlGalnP light-emitting diodes is calculated. The extraction efficiency of 5. 24% and 9.16% for the top active region and the bottom active region are obtained respectively in TRDAR LED chips. |
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| Keywords: | AlGaInP light-emitting diodes tunneling junction extraction efficiency |
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