| 考虑源漏隧穿的DG MOSFET弹道输运及其模拟 |
| |
| 引用本文： | 郑期彤,张大伟,江波,田立林,余志平. 考虑源漏隧穿的DG MOSFET弹道输运及其模拟[J]. 半导体学报, 2004, 25(5): 547-551 |
| |
| 作者姓名： | 郑期彤 张大伟 江波 田立林 余志平 |
| |
| 作者单位： | 清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | 在经典弹道输运模型中引入源漏隧穿 (S/ D tunneling) ,采用 WKB方法计算载流子源漏隧穿几率 ,对薄硅层(硅层厚度为 1nm) DG(dual gate) MOSFETs的器件特性进行了模拟 .模拟结果表明当沟道长度为 10 nm时 ,源漏隧穿电流在关态电流中占 2 5 % ,在开态电流中占 5 % .随着沟道长度进一步减小 ,源漏隧穿比例进一步增大 .因此 ,模拟必须包括源漏隧穿 .
|
| 关 键 词： | 源漏隧穿 DG MOSFET 弹道输运 器件模拟 |
| 文章编号： | 0253-4177(2004)05-0547-05 |
| 修稿时间： | 2003-04-08 |
Simulation of Ballistic Transport Including S/D Tunneling for DG MOSFET |
| |
| Zheng Qitong,Zhang Dawei,Jiang Bo,Tian Lilin and Yu Zhiping. Simulation of Ballistic Transport Including S/D Tunneling for DG MOSFET[J]. Chinese Journal of Semiconductors, 2004, 25(5): 547-551 |
| |
| Authors: | Zheng Qitong Zhang Dawei Jiang Bo Tian Lilin Yu Zhiping |
| |
| Abstract: | The source to drain (S/D) tunneling current is included based on the ballistic transport model in this work,using WKB method to calculate the possibility of tunneling.The device performances of DG (dual gate) MOSFETs with very thin silicon films (thickness of 1nm) are simulated.The simulation results show that when the channel length is 10nm,the S/D tunneling is 25% of the total off current and 5% of the total on current.The proportion of the S/D tunneling will be even larger with the channel length going down.Thus,it is essential to include S/D tunneling into simulations. |
| |
| Keywords: | S/D tunneling DG MOSFET ballistic transport device simulation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
