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不同剂量率下偏置对双极晶体管电离辐照效应的影响
引用本文:张华林,陆妩,任迪远,崔帅. 不同剂量率下偏置对双极晶体管电离辐照效应的影响[J]. 微电子学, 2004, 34(6): 606-608
作者姓名:张华林  陆妩  任迪远  崔帅
作者单位:中国科学院,新疆理化技术研究所,新疆,乌鲁木齐,830011
摘    要:对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验。结果表明,对于不同偏置条件,晶体管在低剂量率辐照下,电流增益都有更为明显的衰降;各种剂量率辐照下,电流增益在发射结反向偏置时比浮空偏置时有更为显著的下降。文章对相关机理进行了探讨。

关 键 词:双极晶体管 偏置 剂量率 电离辐照
文章编号:1004-3365(2004)06-0606-03

Effects of Bias at Different Dose Rates on Ionizing Radiation Response of Bipolar Transistors
ZHANG Hua-lin,LU Wu,REN Di-yuan,CUI Shuai. Effects of Bias at Different Dose Rates on Ionizing Radiation Response of Bipolar Transistors[J]. Microelectronics, 2004, 34(6): 606-608
Authors:ZHANG Hua-lin  LU Wu  REN Di-yuan  CUI Shuai
Abstract:Ionizing radiation response of bipolar transistors at different dose rates and biases has been investigated. It has been shown that the current gain deteriorates significantly at low dose-rate for transistors at different bias conditions, and the degradation becomes more significant at emitter reverse bias than at floating bias when irradiated at different dose-rates. Possible mechanisms for these effects have also been discussed.
Keywords:Bipolar transistor  Bias  Dose rate  Ionizing radiation
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