Validation of bulk-charge effect parameter extraction in MOSFETs |
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| Authors: | F J García Snchez A Ortiz-Conde J A Salcedo J Muci M Estrada A Cerdeira J J Liou Y Yue |
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| Affiliation: | F. J. García Sánchez, A. Ortiz-Conde, J. A. Salcedo, J. Muci, M. Estrada, A. Cerdeira, J. J. Liou,Y. Yue, |
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| Abstract: | Our recently proposed method to extract the bulk-charge effect parameter in MOSFETs is scrutinized by studying SOI devices, a-Si:H TFTs and short- as well as long-channel bulk MOSFETs. The method requires measuring the drain current as a function of gate voltage at two small values of drain voltage chosen in the linear region of operation. |
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