Broadband lumped-element X band GaAs f.e.t. amplifier |
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Authors: | Pengelly RS |
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Affiliation: | Plessey Company Ltd., Romsey, UK; |
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Abstract: | The design of a 2-stage broadband X band amplifier using GaAs Schottky field-effect transistors is described. The performance of the intrinsic device and the amplifier are summarised. The amplifier gives 9.5±1 dB gain over the frequency range 6.5?12 GHz. The v.s.w.r. at the input and the output does not exceed 2.5:1. Practical wideband matching networks are described that minimise overall amplifier noise figure and maintain a constant gain over the design bandwidth, while including the effects of parasitics, loss and discontinuity capacitances. |
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