| 5W ISM波段InGaP/GaAs HBT功率放大器MMIC |
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| 引用本文： | 冯威,戚伟,柳现发,王绍东.5W ISM波段InGaP/GaAs HBT功率放大器MMIC[J].半导体技术,2010,35(3):286-290. |
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| 作者姓名： | 冯威 戚伟 柳现发 王绍东 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051;中国国防科技信息中心,北京,100036 |
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| 基金项目： | Supported by National Basic Research Program of China (973)(2009CB320200) |
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| 摘 要： | 通过分析InGaP/GsAsHBT器件的热学和电学特点,结合HBT大功率放大器芯片在技术性能、稳定性、可靠性及尺寸等方面的要求,通过优化设计HBT功率器件单元和匹配电路,开发了一个大功率、高效率、小尺寸的ISM波段功率放大器单片集成电路。该三级放大器的各级器件单元的发射极面积分别为320μm2,1280μm2,5760μm2,芯片内部包括了输入、输出50Ω匹配电路,面积仅为1.9mm×2.1mm。放大器采用5V单电源供电,在2.4～2.5GHz频率范围内线性增益为27dB,2dB增益压缩点输出饱和功率达到37dBm,功率附加效率为46%。
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| 关 键 词： | 功率放大器 ISM波段 InGaP/GsAs HBT 无线通信 MMIC |
5 W ISM-Band InGaP/GaAs HBT Power Amplifiers MMIC |
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| Feng Wei,Qi Wei,Liu Xianfa,Wang Shaodong.5 W ISM-Band InGaP/GaAs HBT Power Amplifiers MMIC[J].Semiconductor Technology,2010,35(3):286-290. |
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| Authors: | Feng Wei Qi Wei Liu Xianfa Wang Shaodong |
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| Affiliation: | 1.The 13th Research Institute;CETC;Shijiazhuang 050051;China;2.Information Center of China Defense and Technology;Beijing 100036;China |
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| Abstract: | The thermal and electrical performance of the InGaP/GsAs HBT device was analyzed. Considering the characteristic of good high power HBT amplifier chip, such as the performance, stability, reliability and size, an optimized HBT power cell and matching circuit were designed. A high-power, high efficient and small size ISM band MMIC power amplifier was developed. The three-stage MMIC amplifier fabricated with 320μm~2, 1 280μm~2, 5 760/μm~2 emitter area and the die size including the input and output 50Ω matching circuit is 1.9mm × 2.1 mm. When powered by a single 5 V power supply, it exhibits an output power of 37 dBm at 2 dB of gain compression point, a linear gain of 27 dB and an associated PAE of 46% in the frequency range of 2.4 to 2.5 GHz. |
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| Keywords: | power amplifier ISM band InGaP/GaAs HBT MMIC |
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