| 宽禁带半导体功率器件在现代雷达中的应用 |
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| 引用本文： | 周万幸.宽禁带半导体功率器件在现代雷达中的应用[J].现代雷达,2010,32(12). |
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| 作者姓名： | 周万幸 |
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| 作者单位： | 南京电子技术研究所; |
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| 摘 要： | 现代战争对雷达性能的要求日益提高,基础材料、工艺和元器件的飞速发展,促进了雷达技术的不断进步.宽禁带半导体功率器件的出现,使得雷达发射机乃至雷达性能的大幅度提升成为可能.文中简要介绍了现代雷达对大功率发射机的迫切需求,结合宽禁带半导体器件的特点,阐述了该类器件的发展现状,给出了发展趋势及应用展望.
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| 关 键 词： | 雷达 宽禁带半导体功率器件 发射机 |
Application of Wide Band-gap Semiconductor Power Devices in Modern Radar |
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| ZHOU Wan-xing.Application of Wide Band-gap Semiconductor Power Devices in Modern Radar[J].Modern Radar,2010,32(12). |
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| Authors: | ZHOU Wan-xing |
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| Affiliation: | ZHOU Wan-xing(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China) |
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| Abstract: | With the increasing requirements of radar performances in modern war and the rapid development of basic materials,manufacturing technology and devices,research and design of radar technology have achieved continuous progress.The appearance of wide band-gap semiconductors power devices make it possible that the radar transmitter and whole system performances will be improved by a large level.In this paper,the tight requirements of large power to radar transmitter are firstly introduced,and then the current s... |
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| Keywords: | radar wide band-gap semiconductors power devices transmitter |
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