A high-efficiency vertical-cavity surface-emitting switching laserfabricated with post-growth cavity mode positioning |
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| Authors: | Evaldsson P.A. Taylor G.W. Cooke P.W. Sargood S.K. Kiely P.A. Docter D.P. |
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| Affiliation: | AT&T Bell Lab., Holmdel, NJ; |
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| Abstract: | The first room-temperature continuous-wave (CW) operation of the double heterostructure optoelectronic switching laser implemented as a vertical-cavity laser is described. A deposited dielectric top reflector of SiO2/TiO2 allowed the use of a cavity etch back technique after the sample was grown, to position the cavity mode at the desired wavelength. Room temperature CW threshold currents as low as 4.8 mA for a 14-μm-diameter device were obtained with slope efficiencies of 0.45 mW/mA. The maximum CW output power was 2.5 mW and the resistivity was 4×10-4 Ωcm2 |
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