| 凹槽拐角对深亚微米槽栅PMOSFET特性的影响 |
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| 引用本文： | 任红霞,郝跃. 凹槽拐角对深亚微米槽栅PMOSFET特性的影响[J]. 固体电子学研究与进展, 2002, 22(1): 19-24,28 |
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| 作者姓名： | 任红霞 郝跃 |
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| 作者单位： | 西安电子科技大学微电子研究所,710071 |
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| 摘 要： | 为优化槽栅器件结构 ,提高槽栅 MOSFET的性能和可靠性 ,文中用器件仿真软件对凹槽拐角对深亚微米槽栅 PMOSFET的特性影响进行了研究。研究结果表明凹槽拐角强烈影响器件的特性 :随着凹槽拐角的增大 ,阈值电压上升 ,电流驱动能力提高 ,而热载流子效应大大减弱 ,抗热载流子性能增强 ,热载流子可靠性获得提高 ;但凹槽拐角过大时 (例如 90°) ,器件特性变化有所不同
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| 关 键 词： | 槽栅P沟金属-氧化物-半导体场效应晶体管 凹槽拐角 器件特性 |
| 文章编号： | 1000-3819(2002)01-019-06 |
The Influence of Concave Corner on the Characteristics of Deep-submicron Grooved-gate PMOSFETs |
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| REN Hongxia HAO Yue. The Influence of Concave Corner on the Characteristics of Deep-submicron Grooved-gate PMOSFETs[J]. Research & Progress of Solid State Electronics, 2002, 22(1): 19-24,28 |
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| Authors: | REN Hongxia HAO Yue |
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| Abstract: | In order to improve the performance and reliability of grooved gate MOSFET's the effects of concave corner on characteristics of deep submicron grooved gate PMOSFET's are studied using device simulator MEDICI. It is indicated that the concave corner of recessed gate influences device characteristics strongly. With increasing of concave corner, threshold voltage increases, current drive capability becomes great and hot carrier effect decreases. But the variation of characteristics is different when groove corner is very large, such as 90°. |
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| Keywords: | grooved gate PMOSFETs concave corner characteristics of device |
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