氮化处理对ITO薄膜光电特性影响

利用射频磁控溅射在玻璃衬底上制备了氧化铟锡(ITO)薄膜,分别采用两种方法对薄膜进行氮化处理,即:(1)利用氩气溅射在室温下制备薄膜,随后在氮气和氨气气氛下对薄膜进行热处理;(2)利用氩气/氮气共溅射成膜.利用X射线衍射、霍尔效应、UV-vis-NIR分光光度计等测试手段对薄膜样品进行表征,对比研究了两种氮化处理方法对ITO薄膜光电特性的影响.结果发现对于低温生长的薄膜,两种方法均能明显提高其在可见光区的透过率.氩气/氮气共溅射的方法会降低薄膜的结晶程度,降低载流子浓度,但使得其紫外/可见/近红外光谱发生明显红移;而热处理方法则能增加薄膜的结晶程度,提高其导电能力.

Influence of nitrification methods upon optical and electrical properties of ITO films

Two nitrification methods were used to modify the ITO films prepared by r.f.magnetron sputtering:(1)the films were prepared in room temperature using argon as the sputtering gases,and were annealed in ammonia and nitrogen atmosphere respectively;(2)the films were prepared use mixed argon and nitrogen as the sputtering gases.The effect of these two methods on electrical and optical properties of ITO films was studied using X-ray diffraction(XRD),Hall effect and UV-vis-NIR spectrometer.The transmittance of ITO films prepared in room temperature in visible region is greatly improved by both methods.The electrical properties and crystallization of the films are greatly improved by the first method,but are reduced by the second one.The UV-vis-NIR spectrum of ITO films shows red-shift phenomena by the second method.