| 掺硼a-SiC:H/a-Si:H异质结的硼扩散(英文) |
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| 引用本文： | 贺德衍,张仿清,柯宁,宋志忠,陈光华. 掺硼a-SiC:H/a-Si:H异质结的硼扩散(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 贺德衍 张仿清 柯宁 宋志忠 陈光华 |
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| 作者单位： | 兰州大学物理系(贺德衍，张仿清，柯宁，宋志忠)，兰州大学物理系(陈光华) |
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| 摘 要： |
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Boron Diffusion in B-Doped a-SiC:H/a-Si:H Heterojunctions |
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| Abstract: | The diffusion of impurities in a p-i-n solar cell is one of causes for the degradation of energy conversion efficiency. However, few reports on the study of the illumination dependence of the boron diffusion in B-doped a-SiC:H/a-Si:H heterojunction have been seen so far. In this work, the B depth profiles in B-doped a-SiC:H/a-Si:H hetero junctions after illumination and annealing have been measured by nuclear reaction analysis; from the change of B profiles, we estimate the diffusion coefficient of B in a-Si:H.Diffusion of electrically activated B atoms is investigated and a simple discussion for the results obtained is presented as well. |
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