MOCVD生长InGaAs／Alj0.2Ga0.8As应变多量子阱

用MOCVD方法生长了3种InGaAs/Al0.2Ga0.8As应变多量子阱（MQWs）样品，用于研究在气相中TMIn的含量对MQWs的发光波长和半峰宽（FWHM）以及在X射线中零级峰位的影响。研究表明，随着In组分在MQW中的增加，MQWs中应变也随之增加，这是造成FWHM增大的原因。同时也研究了应变MQWs中In组分与气相中TMIn含量的关系，为准确设计和控制MQWs的组分提供了依据。

MOCVD Growth of InGaAs/Al0.2Ga0.8As Strained Multi-quantum Wells

Three strained InGaAs/Al0.2Ga0.8As multi-quantum wells(MQWs) samples were grown by MOCVD.From photoluminescence(PL) spectra at 300 K and double crystal X-ray diffraction(DCXRD),we concluded the emission wavelengths of the strained MQWs and full width at half maximum(FWHM)of the PL peaks as well as the separation of rock angle(Δθ) between zero order peak of the strained MQWs and the peak of the substrate GaAs increased with the TMIn content in the gas phase.It was interpreted that the strain in the MQWs with In-incorporation induced an increase in FWHM.The dependence of the In-content(xs) in strained MQWs at the solid phase on the TMIn content xv at the gas phase was also investigated.