Parameter extraction on MOSFET transistors using a new optimised fit strategy |
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Authors: | Maes W de Meyer K Dupas L |
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Affiliation: | K.U. Leuven, Heverlee, Belgium; |
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Abstract: | Classical parameter-extraction programs rely on the minimisation of the relative current deviation. However, since, especially for analogue applications, the slope of the IDS/VDS curve in the saturation region is at least equally important, a new fit strategy has been developed. This new fit strategy extracts a parameter set which optimises the current residual as well as the slope residual at every point. |
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