| 高压直流悬式绝缘子的造型 |
| |
| 引用本文： | 石玉秉,闵定富.高压直流悬式绝缘子的造型[J].电瓷避雷器,1999(1):24-27. |
| |
| 作者姓名： | 石玉秉 闵定富 |
| |
| 作者单位： | 南京电瓷总厂,南京,210038 |
| |
| 摘 要： | 直流电压下的吸附效应使得绝缘子表面附着的污秽量比交流条件下严重得多，直流污闪的过程亦与交流不同，一般认为绝缘子的直流耐污水平与绝缘子的棱下系数Ｋ有关，且当Ｋ等于０．９左右时呈现最佳耐污特性。本文总结我厂过去的试制研究和国内外刊物报导试验研究结果，认为棱下系数的确定应参考绝缘子运行地区的污秽水平，并且棱下系数的取得应依据每一个优化的ｄｉ与ｗｉ比值。在上述指导思想下设计了一种不同于一般绝缘子的造型，取得了令人满意的试验结果。
|
| 关 键 词： | 直流绝缘子 棱下系数 污秽 造型 |
| 修稿时间： | 1998年12月28日 |
Profile of HVDC Suspension Insulators |
| |
| Nanjing Electrical Ceramic Factory Shi Yubing Min Dingfu.Profile of HVDC Suspension Insulators[J].Insulators and Surge Arresters,1999(1):24-27. |
| |
| Authors: | Nanjing Electrical Ceramic Factory Shi Yubing Min Dingfu |
| |
| Affiliation: | Nanjing 210038 |
| |
| Abstract: | Pollution deposit on insulator surface is more severe at d c. versus a c due to static attraction effect under d c stress It is generally recongnised that the pollution resistance level of insulator is related to its under rib profile factor K which reaches its optimum at K =0 9. From experimental results it is found that factor K of insulator is related to its site pollution severity to be installed and obtained with every specific optimized d i/w i ratio With this consideration an original insulator profile is worked out with satisfactory test results |
| |
| Keywords: | DC insulators profile factor pollution profile |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
