| 利用MOSFET亚阈I-V特性进行辐射感生界面陷阱的测量 |
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| 引用本文： | 张正选,罗晋生,袁仁峰,何宝平,姜景和,罗尹虹.利用MOSFET亚阈I-V特性进行辐射感生界面陷阱的测量[J].电子学报,1999,27(11):1-129,132. |
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| 作者姓名： | 张正选 罗晋生 袁仁峰 何宝平 姜景和 罗尹虹 |
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| 作者单位： | 西安交通大学微电子所!西安710049，西北核技术研究所，西安710024，西安交通大学微电子所!西安710049，西北核技术研究所!西安710024，西北核技术研究所!西安710024，西北核技术研究所!西安710024，西北核技术研究所!西安710024 |
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| 摘 要： | 本文利用MOSFET亚阈IV曲线对加固和非加固MOSFET的辐射感生界面陷阱密度进行了测量.分析和讨论了辐射感生的界面陷阱密度依赖于辐射总剂量和辐射剂量率的变化关系
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| 关 键 词： | I-V特性 辐射 界面陷阱 |
| 修稿时间： | 1998-04-27 |
Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET |
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| ZHANG Zheng xuan ,LUO Jin sheng ,YUAN Ren feng ,HE Bao ping ,JIANG Jing he ,LUO Yin hong Microelectronics Institute,Xi'an Jiaotong University,Xi'an ,China Northwest Institute of Nuclear Technology,Xi'an ,China.Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET[J].Acta Electronica Sinica,1999,27(11):1-129,132. |
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| Authors: | ZHANG Zheng xuan LUO Jin sheng YUAN Ren feng HE Bao ping JIANG Jing he LUO Yin hong Microelectronics Institute Xi'an Jiaotong University Xi'an China Northwest Institute of Nuclear Technology Xi'an China |
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| Affiliation: | ZHANG Zheng xuan 1,2,LUO Jin sheng 1,YUAN Ren feng 2,HE Bao ping 2,JIANG Jing he 2,LUO Yin hong 2 1 Microelectronics Institute,Xi'an Jiaotong University,Xi'an 710049,China 2 Northwest Institute of Nuclear Technology,Xi'an 710024,China |
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| Abstract: | This article studies the measurement of radiation induced interface traps using the subthreshold I V characteristic of MOSFET.The radiation induced interface traps which were related to total dose and dose rate were analyzed and discussed. |
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| Keywords: | I-V characteristic radiation interface traps |
| 本文献已被 CNKI 维普 等数据库收录！ |
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