| VO_x薄膜的sol-gel法制备 |
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| 引用本文： | 曾亦可,吴帮军,姜胜林,邓传益.VO_x薄膜的sol-gel法制备[J].电子元件与材料,2007,26(4):22-24. |
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| 作者姓名： | 曾亦可 吴帮军 姜胜林 邓传益 |
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| 作者单位： | 华中科技大学电子科学与技术系,湖北,武汉,430074 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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教育部跨世纪优秀人才培养计划
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湖北省科技攻关项目 |
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| 摘 要： | 通过对工艺条件的研究,解决了钒有机溶胶与基片的亲水性问题,提出了成膜牢固的亲水处理方法,制备出了无裂纹、致密性好的VOx薄膜。测量结果表明,520℃热处理条件下的VOx薄膜样品的平均电阻温度系数达到了3.95%K–1。而470℃热处理下的VOx薄膜样品,其升降温阻温特性一致性很好,可用作高灵敏度红外探测器敏感元材料。
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| 关 键 词： | 电子技术 VOx sol-gel 薄膜 R-t特性 |
| 文章编号： | 1001-2028（2007）04-0022-03 |
| 修稿时间： | 2006-11-23 |
Fabrication of VOx thin films by sol-gel processing |
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| ZENG Yi-ke,WU Bang-jun,JIANG Sheng-lin,DENG Chuan-yi.Fabrication of VOx thin films by sol-gel processing[J].Electronic Components & Materials,2007,26(4):22-24. |
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| Authors: | ZENG Yi-ke WU Bang-jun JIANG Sheng-lin DENG Chuan-yi |
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| Abstract: | The hydrophilic problem was resolved between VOx organic sol and SiO2/Si substrate slice, a method of forming close film was brought forward. And some crack-free and compact VOx samples were prepared. The results show the average αR is 3.95 % K–1 for VOx thin film samples annealed at 520 ℃. The VOx film samples annealed at 470 ℃ demonstrate similar ln R-t characteristics under heating-up and cooling period, and are suitable for sensitive element of high performance infrared detectors. |
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| Keywords: | electron technology VOx sol-gel thin film R- t characteristics |
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