Investigation of double barrier MOS tunnel diodes with PECVD silicon quantum well |
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| Authors: | B. Majkusiak R.B. Beck A. Mazurak J. Grabowski |
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| Affiliation: | Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland |
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| Abstract: | Double barrier metal-oxide-semiconductor tunnel diodes with ultrathin PECVD Si and thermal SiO2 layers were fabricated. The measured capacitance-voltage and current-voltage characteristics were interpreted and physical parameters of the structures were extracted by means of a theoretical model. |
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