|
|||||
|
|
The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD |
|
| Authors: | XM Yang LJ Zhuge XM Wu T Yu SB Ge |
| Affiliation: | a Department of Physics, Soochow University, Suzhou 215006, China b Analysis and Testing Center, Soochow University, Suzhou 215006, China c The Key Laboratory of Thin Films of Jiangsu, Soochow University, Suzhou 215006, China d State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China |
| Abstract: | We have investigated the influence of assisted ion beam bombardment on structure and electrical properties of HfSiO dielectrics deposited on Si (1 0 0) substrate by dual-ion beam sputtering deposition (DIBSD). The X-ray photoelectron spectroscopy (XPS) analysis indicates that assisted ion beam bombardment could suppress the formation of Si clusters and partial Si O bonds. The excellent electrical properties with maximum dielectric constant (18.6) and the smaller oxide-charge density (7.2 × 1011 cm−2) and leakage current (2.8 × 10−7 A/cm2 at (Vfb−1) V) were obtained for HfSiO film by assisted ion beam bombardment at AIE = 100 eV, which provide a initial energy for the formation of film, activate the substrate surface atoms, enhance the polarization rate and improve the film surface compact and adhesion. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |