Preparation and Characterization of PZT films Fabricated on Si Substrate

Lead zirconium titanate (PZT) films (Zr/Ti=45:55) with a high dielectric constant are prepared successfully on the low-resistance Si substrate in sol–gel dip-coating process with PT film used as the buffer layer. The dielectric and ferroelectric properties of the films as well as the relationship between crystallization and preparing condition are studied. It is shown that the PZT ferroelectric thin films with a (110) preferred orientation and a well-crystallized perovskite structure could be obtained after annealing at 800°C for 15 min. The particle size of the sample is about 14–25 nm. The P–E hysteresis loops are measured by means of the Sawyer-Tower test system with a compensation resistor at room temperature. The remanent polarization (P _r) and coercive electric field (E _c) of the measured PZT thin films are 47.7 μC/cm² and 18 kV/cm, respectively. The relative dielectric constant ε _r and the dissipation factor tgδ of the PZT thin films were measured with an LCR meter and were found to be 158 and 0.04–0.005, respectively. Translated from “Preparation and Characterization of PZT Films Fabricated on Si Substrates” published in Chinese Journal of Semiconductors, 2004, 25(4): 404–409 (in Chinese)