Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs |
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Authors: | P M Mooney T N Theis E Calleja |
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Affiliation: | (1) IBM Research Division, T. J. Watson Research Center, P.O. Box 218, 10598 Yorktown Heights, NY, USA;(2) ETSI Telecommunication, Dpto. Ingenieria Electronica, Universidad Politécnica, Ciudad Universitaria, 28040 Madrid, Spain |
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Abstract: | In this paper we summarize our recent studies of the effects of local alloy disorder on the properties ofDX levels. A single emission rate is observed in GaAs where all Si-donors have identical local environments. In contrast, three
discrete emission rates are observed in dilute AlGaAs alloys, suggesting that the group IV donor moves towards the interstitial
site, thereby “selecting” three of the twelve surrounding group III atoms. We present evidence for an ordering of theDX levels consistent with Morgan’s model of a deepening potential well for theDX level as Al atoms are subsequently substituted for Ga atoms near the relaxed donor. These conclusions are consistent with
earlier calculations of Chadi and Chang. |
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Keywords: | AlGaAs DX centers Local alloy disorder |
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