| Near Infrared Electoluminescence of Er—doped ZnS Thin Film Devices |
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| 引用本文： | WANGYujiang LIUZhaohong. Near Infrared Electoluminescence of Er—doped ZnS Thin Film Devices[J]. 半导体光子学与技术, 1998, 4(4): 231-234 |
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| 作者姓名： | WANGYujiang LIUZhaohong |
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| 作者单位： | Dept.ofPhysics,XiamenUniversity,xiamen361005,CHN |
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| 基金项目： | Supported by Fujian Natural Science Fund (No.A97006). |
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| 摘 要： | Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two doats,are reported.The study of the film microstructure has been carried out using X-ray diffraction.The effects of the E-rdoped film microstructure on luminescence are pointed out.
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| 关 键 词： | 微细构造 近红外电致发光 硫化锌薄膜 |
| 收稿时间： | 1998-04-07 |
Near Infrared Electroluminescence of Er-doped ZnS Thin Film Devices |
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| Abstract: | Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two boats, are reported. The study of the film microstructure has been carried out using X-ray diffraction. The effects of the Er-doped film microstructure on luminescence are pointed out. |
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| Keywords: | Microstructure Near Infrared Electroluminescence ZnS Thin Film |
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