| 区熔硅单晶掺杂技术概述 |
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| 引用本文： | 庞炳远.区熔硅单晶掺杂技术概述[J].电子工业专用设备,2011,40(5):52-54. |
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| 作者姓名： | 庞炳远 |
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| 作者单位： | 中国电子科技集团公司第四十六研究所,天津,300220 |
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| 摘 要： | 区熔硅单晶是制作电力电子器件的主要原材料,高质量的电力电子器件的发展对区熔硅单晶的高完整性、高纯度、高均匀性及大直径化提出了较高的要求.随着电力电子器件快速发展,市场需求急剧增加,为了深入的研究并应用掺杂技术,对几种掺杂工艺进行了分析和探讨.
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| 关 键 词： | 区熔 硅单晶 掺杂 |
The Technology of FZ silicon doping |
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| PANG Bingyuan.The Technology of FZ silicon doping[J].Equipment for Electronic Products Marufacturing,2011,40(5):52-54. |
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| Authors: | PANG Bingyuan |
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| Affiliation: | PANG Bingyuan (The 46th Research Institute of CETC,Tianjin 300220,China) |
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| Abstract: | FZ Si single crystal is the major raw material for Power Electronics device manufacturing.Higher quality Power Electronics has higher requirement of FZ single crystal including integrity,purity and larger diameter.With rapid development of Power Electronics device,FZ Si single crystal business demand increases sharply.To deeply investigate doping technology and implement it,this paper will focus on the research of gas doping process. |
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| Keywords: | FZ Si crystal Doping |
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