Study of nickel silicide contact on Si/Si/sub 1-x/Ge/sub x/ |
| |
| Authors: | Tsung-Hsi Yang Guangli Luo Chang EY Tsung-Yeh Yang Hua-Chou Tseng Chun-Yen Chang |
| |
| Affiliation: | Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan; |
| |
| Abstract: | The properties of nickel silicide formed by depositing nickel on Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer are compared with that of nickel germanosilicide on p/sup +/-Si/sub 1-x/Ge/sub x/ layer formed by depositing Ni directly on p/sup +/-Si/sub 1-x/Ge/sub x/ layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/p/sup +/-Si/sub 1-x/Ge/sub x/ layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on p/sup +/-Si/sub 1-x/Ge/sub x/ layer. In addition, small junction leakage current is also observed for nickel silicide on a Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si diode. In summary, with a Si consuming layer on top of the Si/sub 1-x/Ge/sub x/, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on the Si/sub 1-x/Ge/sub x/ layer. |
| |
| Keywords: | |
|
|
