| 利用双低温缓冲层和插入应变超晶格技术制备高质量InP-on-GaAs复合衬底的MOCVD生长 |
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| 引用本文： | 周静,任晓敏,黄永清,王琦. 利用双低温缓冲层和插入应变超晶格技术制备高质量InP-on-GaAs复合衬底的MOCVD生长[J]. 半导体学报, 2008, 29(10): 1855-1859 |
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| 作者姓名： | 周静 任晓敏 黄永清 王琦 |
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| 作者单位： | 北京邮电大学光通信与光波技术教育部重点实验室,北京,100876;北京邮电大学光通信与光波技术教育部重点实验室,北京,100876;北京邮电大学光通信与光波技术教育部重点实验室,北京,100876;北京邮电大学光通信与光波技术教育部重点实验室,北京,100876 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2003CB314901); 国家高技术研究发展计划(批准号:2007AA03Z418); 111项目(批准号:B07005)资助项目~~ |
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| 摘 要： | 提出一种结合双低温缓冲层和应变超晶格优势的高质量InP-on-GaAs复合衬底制备技术. 研究发现LT-InP/LT-GaAs的双低温缓冲层比单一低温InP缓冲层的聚集应变的效果更为显著. 并且,双低温缓冲层中的低温GaAs层存在一个最优生长厚度. 当低温InP生长厚度一定,低温GaAs层的生长厚度达到优化生长厚度时,LT-InP/LT-GaAs双低温缓冲层能达到调节应变的最佳状态. 最后,通过插入InGaP/InP应变超晶格,并且优化其在外延层中的插入位置,得到了高质量的InP-on-GaAs的复合衬底,2μm厚的InP外延层XRD-ω/2θ扫描的半高宽小于200" .
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| 关 键 词： | InP-011-GaAs 双低温缓冲层 InGaP/InP应变超晶格 MOCVD |
Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD |
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| Zhou Jing,Ren Xiaomin,Huang Yongqing and Wang Qi. Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD[J]. Chinese Journal of Semiconductors, 2008, 29(10): 1855-1859 |
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| Authors: | Zhou Jing Ren Xiaomin Huang Yongqing Wang Qi |
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| Affiliation: | Key Laboratory of Optical Communication & Lightwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication & Lightwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication & Lightwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China;Key Laboratory of Optical Communication & Lightwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China |
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| Abstract: | We investigate the growth of InP-on-GaAs combined with the advantages of double low-temperature(LT)buffers and strained layer surperlattices(SLSs).It is found that LT-InP/LT-GaAs double LT buffers are more effective for strain accommodation than a LT-InP single buffer in InP-on-GaAs.On the other hand,there is an optimal thickness for LT-GaAs for a given thickness of the LT-InP layer,at which the double LT buffers can reach the best state for strain adjustment.Furthermore,the position of insertion of SLSs sh... |
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| Keywords: | InP-on-GaAs double low-temperature buffers InGaP/InP SLSs MOCVD |
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