A RF receiver frontend for SC-UWB in a 0.18-μm CMOS process |
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作者姓名: | 郭瑞 张海英 |
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作者单位: | Institute of Microelectronics,Chinese Academy of Sciences;Shenyang Zhongke Microelectronics Co.,Ltd |
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基金项目: | Project supported by the National Science and Technology Major Projects of China(Nos.2011ZX03004-001-02,2010ZX03007-001-03) |
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摘 要: | 正A radio frequency(RF) receiver frontend for single-carrier ultra-wideband(SC-UWB) is presented. The front end employs direct-conversion architecture,and consists of a differential low noise amplifier(LNA),a quadrature mixer,and two intermediate frequency(IF) amplifiers.The proposed LNA employs source inductively degenerated topology.First,the expression of input impedance matching bandwidth in terms of gate-source capacitance, resonant frequency and target S_(11) is given.Then,a noise figure optimization strategy under gain and power constraints is proposed,with consideration of the integrated gate inductor,the bond-wire inductance,and its variation.The LNA utilizes two stages with different resonant frequencies to acquire flat gain over the 7.1-8.1 GHz frequency band,and has two gain modes to obtain a higher receiver dynamic range.The mixer uses a double balanced Gilbert structure.The front end is fabricated in a TSMC 0.18-/im RF CMOS process and occupies an area of 1.43 mm~2.In high and low gain modes,the measured maximum conversion gain are 42 dB and 22 dB,input 1 dB compression points are -40 dBm and -20 dBm,and S_(11) is better than -18 dB and -14.5 dB.The 3 dB IF bandwidth is more than 500 MHz.The double sideband noise figure is 4.7 dB in high gain mode.The total power consumption is 65 mW from a 1.8 V supply.
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关 键 词: | radio frequency receiver front end CMOS low noise amplifier inductively degenerated singlecarrier ultra-wideband |
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