ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al(2)O(3) gate oxides |
| |
Authors: | Yeom Donghyuk Kang Jeongmin Lee Myoungwon Jang Jaewon Yun Junggwon Jeong Dong-Young Yoon Changjoon Koo Jamin Kim Sangsig |
| |
Affiliation: | Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea. |
| |
Abstract: | The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al(2)O(3) tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8?V was observed in its drain current versus gate voltage (I(DS)-V(GS)) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|