Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil |
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Authors: | Liu Zhihong Zhang Hui Wang Lei Yang Deren |
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Affiliation: | State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China. |
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Abstract: | Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650?°C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200?nm and tips with diameter of about 10-50?nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7?V?μm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as?emitters. |
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