GaN核辐射探测器的性能研究

GaN作为第3代半导体材料，具有禁带宽度大、电子饱和漂移速度大、抗辐射能力强等特点。制备了GaN半导体探测器，并应用该探测器对²⁴¹Am α粒子能谱进行测量，得到α粒子能谱的能量分辨率约30%。同时，以Si半导体探测器为标准，对GaN探测器进行了能量及探测效率的测量，得到探测器的探测效率最高可达80.1%。最后，应用Keithley 2635静电计对GaN探测器的I-V曲线等进行测试，发现在-15 V偏压下，GaN探测器的本底电流密度小于70 nA/cm²。

Study on Performance of GaN Radiation Detector

Gallium nitride (GaN) as a radiation detector has many advantages, such as wide forbidden band, high resistant radiation and so on. It can be applied in high temperature and high density radiation field environment. The energy spectrum of ²⁴¹Am α particle was measured by GaN semiconductor detector, and the energy resolution of which is about 30%. At the same time, the energy and detection efficiency calibration of GaN detector was carried out using Si semiconductor detector which was assumed to have 100% detection efficiency. The detection efficiency of GaN detector was up to 80.1%. Finally, current-voltage (I-V) curve was measured using Keithley 2635 electrometer. The background current density is less than 70 nA/cm² at -15 V reverse bias.