| 高速双极晶体管工艺条件的优化研究 |
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| 引用本文： | 程超,海潮和,孙宝刚. 高速双极晶体管工艺条件的优化研究[J]. 微电子学, 2005, 35(2): 130-132,137 |
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| 作者姓名： | 程超 海潮和 孙宝刚 |
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| 作者单位： | 中国科学院,微电子研究所,北京,100029 |
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| 基金项目： | 国家高技术研究发展(863)计划资助项目——数模混合电路兼容工艺技术研究(2002AA1Z1560) |
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| 摘 要： | 报道了一种使用深槽隔离和注入基区及快速热退火(RTA)，同时为发射极扩散和Ti硅化物退火的双层多晶硅双极技术。对内基区注入、选择性注入集电极(SIC)以及RTA等主要工艺条件对器件特性的影响进行了研究和优化。根据优化结果，制作出了性能优良的高速双极晶体管。
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| 关 键 词： | 双极晶体管 深槽隔离 选择性注入集电极 快速热退火 |
| 文章编号： | 1004-3365(2005)02-0130-03 |
A Study on the Optimization of High-Speed Bipolar Transistor Process |
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| CHENG Chao,HAI Chao-he,SUN Bao-gang. A Study on the Optimization of High-Speed Bipolar Transistor Process[J]. Microelectronics, 2005, 35(2): 130-132,137 |
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| Authors: | CHENG Chao HAI Chao-he SUN Bao-gang |
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| Abstract: | A double-layer polysilicon bipolar technology is presented. Deep-trench isolation and BF_2-implanted base layer, combined with rapid thermal annealing (RTA), are used in the process for emitter diffusion and titanium silicide annealing. Some important process steps,including the inner-base implantation, selective implantation of collectors (SIC) and RTA, are investigated and optimized. High-speed devices with excellent electrical performance are achieved based on the optimized process conditions. |
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| Keywords: | Bipolar transistor Trench isolation Selectively implanted collector Rapid thermal annealing |
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