| 双频带低噪声放大器设计 |
| |
| 引用本文： | 刘波宇,张万荣,谢红云,丁春宝. 双频带低噪声放大器设计[J]. 电子器件, 2011, 34(3): 278-281. DOI: 10.3969/j.issn.1005-9490.2011.03.011 |
| |
| 作者姓名： | 刘波宇 张万荣 谢红云 丁春宝 |
| |
| 作者单位： | 北京工业大学电子信息与控制工程学院; |
| |
| 基金项目： | 国家自然科学基金(60376033,60776051,61006044,61006059); 北京市自然基金(4082007) |
| |
| 摘 要： | 基于Jazz 0.35 μm SiGe工艺,设计了一款能够在1.8 GHz和2.4 GHz不同频段带独立工作的低噪声放大器.放大器使用噪声性能优良的SiGe HBT,采用Cascode结构减少米勒效应的影响.输入电路采用由两次连续的频率变换和电路转换得到的双频滤波电路,输出端用射随器实现50Ω阻抗匹配.结果表明,该低噪...
|
| 关 键 词： | 双频带 频率转换 低噪声放大器 |
Design of a Dual-Band Low Noise Amplifier |
| |
| LIU Boyu,ZHANG Wanrong,XIE Hongyun,JIN Dongyue,DING Chunbao. Design of a Dual-Band Low Noise Amplifier[J]. Journal of Electron Devices, 2011, 34(3): 278-281. DOI: 10.3969/j.issn.1005-9490.2011.03.011 |
| |
| Authors: | LIU Boyu ZHANG Wanrong XIE Hongyun JIN Dongyue DING Chunbao |
| |
| Affiliation: | LIU Boyu,ZHANG Wanrong*,XIE Hongyun,JIN Dongyue,DING Chunbao(College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China) |
| |
| Abstract: | Based on Jazz 0.35 μm SiGe process,a SiGe HBT low noise amplifier(LNA)that can operate respectively at two frequencies of 1.8 GHz and 2.4 GHz was designed.The amplifier was composed of SiGe HBTs which has good noise performance.The cascode circuit was used to reduce the Miller effect of transistor.The input match circuit adopted a dual-Band filter circuit that was obtained by frequency transformation and circuit conversion.The output circuit matched 50Ω by emitter-follower.The results showed that when the amplifier operated at dual frequencies of 1.8 GHz and 2.4 GHz,S21 reached-30 dB and-28.3 dB respectively,S22 reached-19 dB and-20 dB,and the noises were 3.42 dB and 3.45 dB. |
| |
| Keywords: | dual-band frequency transformation low noise amplifier |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《电子器件》浏览原始摘要信息 |
|
点击此处可从《电子器件》下载免费的PDF全文 |
|
