| 背面刻蚀对单晶硅太阳电池性能影响的研究 |
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| 引用本文： | 杨超,沈鸿烈,吴京波,陈海力,江丰,李斌斌.背面刻蚀对单晶硅太阳电池性能影响的研究[J].电子器件,2011,34(2):125-128. |
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| 作者姓名： | 杨超 沈鸿烈 吴京波 陈海力 江丰 李斌斌 |
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| 作者单位： | 南京航空航天大学材料科学与技术学院;南京沙宁申科技开发有限公司; |
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| 基金项目： | 国家高技术研究发展计划(863计划)项目(2006AA03Z219) |
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| 摘 要： | 为了减少太阳电池载流子的背面复合,采用离子束对沉积完SiNx减反射膜后的单面扩散和双面扩散的单晶硅片背面进行刻蚀,研究了刻蚀时间对太阳电池性能的影响.采用标准的太阳电池单片测试仪测试电池性能.发现背面经离子束刻蚀后,单面扩散和双面扩散电池片的并联电阻、开路电压、填充因子和转换效率都有所提高,而串联电阻和短路电流的变化则...
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| 关 键 词： | 太阳电池 离子束刻蚀 开路电压 填充因子 转换效率 |
Study of the Influence of Back Side Etching on the Performance of Monocrystalline Silicon Solar Cells |
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| YANG Chao,SHEN Honglie,WU Jingbo,CHENG Haili,JIANG Fen,LI Bingbing.Study of the Influence of Back Side Etching on the Performance of Monocrystalline Silicon Solar Cells[J].Journal of Electron Devices,2011,34(2):125-128. |
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| Authors: | YANG Chao SHEN Honglie WU Jingbo CHENG Haili JIANG Fen LI Bingbing |
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| Affiliation: | YANG Chao1,SHEN Honglie1,WU Jingbo2,CHENG Haili1,JIANG Fen1,LI Bingbing1(1.College of Materials Science & Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China,2.Nanjing Shiningsun Technology Development Co.,Ltd,Nanjing 211300,China) |
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| Abstract: | To reduce the carrier recombination on the rear side of solar cells,this article carried out the ion beam etching on the rear side of single-side diffused and double-side diffused silicon wafers after depositing SiNx anti-reflection coating.The influence of etching time on the performance of solar cells was investigated.The performance of solar cells was measured by a standard solar cell tester.The results showed that the shunt resistance,open circuit voltage,fill factor and efficiency of the solar cells we... |
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| Keywords: | solar cells ion beam etching open circuit voltage fill factor efficiency |
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